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| H11B1/ H11B2/ H11B3 Vishay Semiconductors Optocoupler, Photodarlington Output, High Gain, With Base Connection Features * * * * Isolation test voltage, 5300 VRMS Coupling capacitance, 0.5 pF Lead-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC A C NC 1 2 3 6B 5C 4E Agency Approvals * UL1577, File No. E52744 System Code J i179005 e3 Pb Pb-free * DIN EN 60747-5-2 (VDE0884) DIN EN 60747-5-5 pending Available with Option 1 Order Information Part H11B1 H11B2 H11B3 H11B1-X007 H11B1-X009 H11B2-X009 Remarks CTR > 500 %, DIP-6 CTR > 200 %, DIP-6 CTR > 100 %, DIP-6 CTR > 500 %, SMD-6 (option 7) CTR > 500 %, SMD-6 (option 9) CTR > 200 %, SMD-6 (option 9) Description The H11B1/ H11B2/ H11B3 are industry standard optocouplers, consisting of a gallium arsenide infrared LED and a silicon photodarlington. For additional information on the available options refer to Option Information. Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. Input Parameter Reverse voltage Forward continuous current Power dissipation Derate linearly from 25 C Test condition Symbol VR IF Pdiss Value 3.0 60 100 1.33 Unit V mA mW mW/C Output Parameter Collector-emitter breakdown voltage Emitter-collector breakdown voltage Collector-base breakdown voltage Test condition Symbol BVCEO BVECO BVCBO Value 25 7.0 30 Unit V V V Document Number 83609 Rev. 1.5, 26-Oct-04 www.vishay.com 1 H11B1/ H11B2/ H11B3 Vishay Semiconductors Parameter Collector current (continuous) Power dissipation Derate linearly from 25 C Test condition Symbol IC Pdiss Value 100 150 2.0 Unit mA mW mW/C Coupler Parameter Isolation test voltage Test condition between emitter and detector, refer to standard climate 23 C/50 %RH, DIN 50014 Symbol VISO Value 5300 Unit VRMS Creepage Clearance Comparative tracking index per DIN IEC 112/VDE 0303, part 1 Isolation resistance VIO = 500 V, Tamb = 25 C VIO = 500 V, Tamb = 100 C Total package dissipation (LED plus detector) Derate linearly from 25 C Storage temperature Operating temperature Lead soldering time at 260 C Tstg Tamb RIO RIO Ptot 7.0 7.0 175 1012 1011 260 3.5 - 55 to + 150 - 55 to + 100 10 mm mm mW mW/C C C sec. Electrical Characteristics Tamb = 25 C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input Parameter Forward voltage Test condition IF = 50 mA IF = 10 mA Reserve current Junction capacitance VR = 3.0 V VF = 0 V, f = 1.0 mHz Part H11B1 H11B2 H11B3 Symbol VF VF VF IR Cj 50 Min Typ. 1.1 1.1 1.1 Max 1.5 1.5 1.5 10 Unit V V V A pF Output Parameter Collector-emitter breakdown voltage Emitter-collector breakdown voltage Collector-base breakdown voltage Collector-emitter leakage current Test condition IC = 1.0 mA, IF = 0 mA IE = 100 A, IF = 0 mA IC = 100 A, IF = 0 mA VCE = 10 V, IF = 0 mA Symbol BVCEO BVECO BVCBO ICEO Min 30 7.0 30 100 Typ. Max Unit V V V nA www.vishay.com 2 Document Number 83609 Rev. 1.5, 26-Oct-04 H11B1/ H11B2/ H11B3 Vishay Semiconductors Coupler Parameter Saturation voltage collectoremitter Capacitance (input-output) Test condition IC = 1.0 mA, IC = 1.0 mA Symbol VCEsat CIO 0.5 Min Typ. Max 1.0 Unit V pF Current Transfer Ratio Parameter DC Current Transfer Ratio Test condition VCE = 5.0 V, IF = 1.0 mA Part H11B1 H11B2 H11B3 Symbol CTRDC CTRDC CTRDC Min 500 200 100 Typ. Max Unit % % % Switching Characteristics Parameter Switching times Test condition IF = 5.0 mA, VCE = 10 V, RL = 100 Symbol ton toff Min Typ. 5.0 30 Max Unit s s Typical Characteristics (Tamb = 25 C unless otherwise specified) 1.4 NCTRce - Normalized CTRce VF - Forward Voltage - V 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 .1 .1 1 10 IF - Forward Current - mA 100 ih11b1_02 1. 3 1.2 1.1 1.0 0.9 0.8 0.7 Ta = -55C Normalized to: Vce = 5 V IF = 1 mA Ta = 25C Vce = 5 V Ta = 100C Vce = 1 V 1 10 100 IF - LED Current - mA ih11b1_01 Figure 1. Forward Voltage vs. Forward Current Figure 2. Normalized Non-Saturated and Saturated CTRCE vs. LED Current Document Number 83609 Rev. 1.5, 26-Oct-04 www.vishay.com 3 H11B1/ H11B2/ H11B3 Vishay Semiconductors 100 Normalized to: Vce = 5 V Vce = 5 V tpLH - Low/High Propagation Delay - S 80 Vcc = 5V Vth = 1.5 V 60 220 i 40 470 20 100 0 0 ih11b1_06 1.0 k NIce - Normalized Ice 10 IF = 2 mA Vce = 1V 1 .1 .01 .1 ih11b1_03 10 1 IF - LED Current - mA 100 5 10 15 20 IF - LED Current - mA Figure 3. Normalized Non-Saturated and Saturated ICE vs. LED Current Figure 6. Low to High Propagation Delay vs. Collector Load Resistance and LED Current 10 Normalized to: IF = 10 mA Vce = 5 V Vce = 5 V tpHL - High/Low Propagation delay - s 20 1k 15 Vcc = 5 V Vth = 1.5 V 10 100 5 NIce - Normalized Ice 1 Vce = 1V .1 .01 .001 .1 ih11b1_04 10 1 IF - LED Current - mA 100 0 0 5 10 15 20 IF - LED Current - mA ih11b1_07 Figure 4. Normalized Non-Saturated and Saturated CollectorEmitter Current vs. LED Current Figure 7. High to low Propagation Delay vs. Collector Load Resistance and LED Current 10000 HFE - Forward Transfer Gain Vce = 5 V 8000 6000 4000 2000 0 .01 Vce = 1 V VO tD tR tPLH VTH = 1.5 V .1 1 10 100 tPHL tS tF Ib - Base Current - A IF ih11b1_05 ih11b1_08 Figure 5. Non-Saturated and Saturated HFE vs. Base Current Figure 8. Switching Waveform www.vishay.com 4 Document Number 83609 Rev. 1.5, 26-Oct-04 H11B1/ H11B2/ H11B3 Vishay Semiconductors Figure 9. Switching Schematic VCC = 10 V F=10 KHz, DF=50% RL VO IF =5 mA ih11b1_09 Package Dimensions in Inches (mm) pin one ID 3 .248 (6.30) .256 (6.50) 4 2 1 5 6 ISO Method A .335 (8.50) .343 (8.70) .039 (1.00) Min. 4 typ. .018 (0.45) .022 (0.55) i178004 .048 (0.45) .022 (0.55) .130 (3.30) .150 (3.81) .300 (7.62) typ. 18 .031 (0.80) min. .031 (0.80) .035 (0.90) .100 (2.54) typ. 3-9 .010 (.25) typ. .300-.347 (7.62-8.81) .114 (2.90) .130 (3.0) Document Number 83609 Rev. 1.5, 26-Oct-04 www.vishay.com 5 H11B1/ H11B2/ H11B3 Vishay Semiconductors Option 7 .300 (7.62) TYP . Option 9 .375 (9.53) .395 (10.03) .300 (7.62) ref. .028 (0.7) MIN. .180 (4.6) .160 (4.1) .0040 (.102) .0098 (.249) .315 (8.0) MIN. .331 (8.4) MIN. .406 (10.3) MAX. .012 (.30) typ. .020 (.51) .040 (1.02) .315 (8.00) min. 15 max. 18494 www.vishay.com 6 Document Number 83609 Rev. 1.5, 26-Oct-04 H11B1/ H11B2/ H11B3 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 83609 Rev. 1.5, 26-Oct-04 www.vishay.com 7 |
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